IS25F021A-3V-R Datasheet PDF - Integrated Silicon Solution

DESCRIPTION
The IS25F011A, IS25F021A, and IS25F041A Serial Flash memories provide a storage solution for systems limited in power, pins, space, hardware, and firmware resources. They are ideal for applications that store voice, text, and data in a portable or mobile environment. Using ISSIs patented single transistor EEPROM cell, the devices offer a high-density, low-voltage, low-power, and cost-effective nonvolatile memory solution.

FEATURES
• Flash Storage for Resource-Limited Systems
    – Ideal for portable/mobile and microcontroller-based applications that store voice, text, and data
• NexFLASH TM Serial Flash Memory
    – Patented single transistor EEPROM memory
    – High-density, low-voltage/power, cost-effective
    – Small 264-byte sectors
    – 10K/100K write cycles, ten years data retention
• Ultra-low Power for Battery-Operation
    – Single 5V or 3V supply for read and erase/write
    – < 1 µA standby current, 5 mA active @ 3V (typical)
    – Low frequency read command for very low power
    – No pre-erase. Erase/Write time of 5 ms/sector @ 5V, ensures efficient battery use
• 4-pin SPI Serial Interface
    – Easily interfaces to popular microcontrollers
    – Clock operation as fast as 16 MHz
• On-chip Serial SRAM
    – Dual 264-byte Read/Write SRAM buffers
    – Use in conjunction with or independent of Flash
    – Off-loads RAM-limited microcontrollers
• Special Features for Media-Storage Applications
    – Byte-level addressing
    – Transfer or compare sector to SRAM
    – Versatile hardware and software write-protection
    – Alternate oscillator frequency for EMI sensitive applications.
    – In-system electronic part number identification
    – Removable Serial Flash Module package option
    – SFK-SPI Serial Flash Development Kit