IXFC80N10 Datasheet PDF - IXYS CORPORATION

HiPerFET™ MOSFET ISOPLUS220™
Electrically Isolated Back Surface

FEATUREs
● Silicon chip on Direct-Copper-Bond substrate
   - High power dissipation
   - Isolated mounting surface
   - 2500V electrical isolation
● Low drain to tab capacitance(<35pF)
● Low RDS (on)
● Rugged polysilicon gate cell structure
● Unclamped Inductive Switching (UIS) rated
● Fast intrinsic Rectifier

APPLICATIONs
● DC-DC converters
● Battery chargers
● Switched-mode and resonant-mode power supplies
● DC choppers
● AC motor control

Advantages
● Easy assembly: no screws or isolation foils required
● Space savings
● High power density
● Low collector capacitance to ground (low EMI)