IXFH6N100F Datasheet PDF - IXYS CORPORATION

Features
● RF capable MOSFETs
● Double metal process for low gate resistance
● Rugged polysilicon gate cell structure
● Unclamped Inductive Switching (UIS) rated
● Low package inductance
   - easy to drive and to protect
● Fast intrinsic rectifier

APPLICATIONs
● DC-DC converters
● Switched-mode and resonant-mode
   power supplies, >500kHz switching
● DC choppers
● 13.5 MHz industrial applications
● Pulse generation
● Laser drivers
● RF amplifiers

Advantages
● Space savings
● High power density