HiPerRF™ Power MOSFETs
F-Class: MegaHertz Switching
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, Low Intrinsic Rg
High dV/dt, Low trr
Features
● RF capable Mosfets
● Rugged polysilicon gate cell structure
● Double metal process for low gate
resistance
● Unclamped Inductive Switching (UIS)
rated
● Low package inductance
- easy to drive and to protect
● Fast intrinsic rectifier
Applications
● DC-DC converters
● Switched-mode and resonant-mode
power supplies, >500kHz switching
● DC choppers
● Pulse generation
● Laser drivers
Advantages
● PLUS 247TMpackage for clip or spring
mounting
● Space savings
● High power density