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IXFN21N100Q Datasheet PDF - IXYS CORPORATION

IXFN21N100Q image

Part Name
IXFN21N100Q

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page
4 Pages

File Size
122.1 kB

MFG CO.
IXYS
IXYS CORPORATION IXYS

Single MOSFET Die
N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt


FEATUREs
• IXYS advanced low Qg process
• Low gate charge and capacitances
    - easier to drive
    - faster switching
• Unclamped Inductive Switching (UIS) rated
• Low RDS (on)
• Fast intrinsic diode
• International standard package
• miniBLOC with Aluminium nitride isolation for low thermal resistance
• Low terminal inductance (<10 nH) and stray capacitance to heatsink (<35pf)
• Molding epoxies meet UL 94 V-0 flammability classification


APPLICATIONs
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• Temperature and lighting controls

Advantages
• Easy to mount
• Space savings
• High power density


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