IXFN280N07 Datasheet PDF - IXYS CORPORATION

HiPerFET Power MOSFETs Single Die MOSFET

N-Channel Enhancement Mode Avalanche Rated
High dV/dt, Low trr

FEATUREs
• International standard package
• miniBLOC with Aluminium nitride isolation
• Low RDS(on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped inductive switching (UIS) rated
• Low package inductance
• Fast intrinsic Rectifier

Advantages
• Easy to mount
• Space savings
• High power density

APPLICATIONs
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• Temperature and lighting controls
• Low voltage relays