IXFR10N100F Datasheet PDF - IXYS CORPORATION

HiPerFET™ Power MOSFETs ISOPLUS247™ F-Class: MegaHertz Switching (Electrically Isolated Back Surface)

N-Channel Enhancement Mode
Avalanche Rated, High dV/dt
Low Gate Charge and Capacitances

FEATUREs
• RF capable MOSFETs
• Double metal process for low gate resistance
• Unclamped Inductive Switching (UIS) rated
• Low package inductance - easy to drive and to protect
• Fast intrinsic rectifier

APPLICATIONs
• DC-DC converters
• Switched-mode and resonant-mode power supplies, >500kHz switching
• DC choppers
• 13.5 MHz industrial applications
• Pulse generation
• Laser drivers
• RF amplifiers

Advantages
• ISOPLUS 247TM package for clip or spring mounting
• Space savings
• High power density