Features
● Silicon chip on Direct-Copper-Bond substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
● 2ND generation CoolMOS power MOSFET
- High blocking capability
- Low on resistance
- Avalanche rated for unclamped inductive
switching (UIS)
● Low thermal resistance due to reduced chip thickness
● Low drain to tab capacitance(<30pF)
APPLICATIONs
● Switched Mode Power Supplies (SMPS)
● Uninterruptible Power Supplies (UPS)
● Power Factor Correction (PFC)
● Welding
● Inductive Heating
Advantages
● Easy assembly: no screws or isolation foils required
● Space savings
● High power density