IXTC200N10T Datasheet PDF - IXYS CORPORATION

TrenchMV™ Power MOSFET
(Electrically Isolated Back Surface)

N-Channel Enhancement Mode
Avalanche Rated

FEATUREs
• Silicon chip on Direct-Copper Bond
   (DCB) substrate
• Isolated mounting surface
• 2500V electrical isolation

Advantages
• Easy to mount
• Space savings
• High power density

APPLICATIONs
• Automotive
   - Motor Drives
   - High Side Switch
   - 12V Battery
   - ABS Systems
• DC/DC Converters and Off-line UPS
• Primary - Side Switch
• High Current Switching Applications