IXTH36P10 Datasheet PDF - IXYS CORPORATION

Standard Power MOSFET

P-Channel Enhancement Mode Avalanche Rated

FEATUREs
• International standard package JEDEC TO-247 AD
• Low R DS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Low package inductance (<5 nH) - easy to drive and to protect

APPLICATIONs
• High side switching
• Push-pull amplifiers
• DC choppers
• Automatic test equipment

Advantages
• Easy to mount with 1 screw (isolated mounting screw hole)
• Space savings
• High power density