IXTP2N80 Datasheet PDF - IXYS CORPORATION

High Voltage MOSFET
N-Channel Enhancement Mode Avalanche Energy Rated

FEATUREs
• International standard packages
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Low package inductance (< 5 nH) - easy to drive and to protect
• Fast switching times

APPLICATIONs
• Switch-mode and resonant-mode power supplies
• Flyback inverters
• DC choppers

Advantages
• Space savings
• High power density