L6560 Datasheet PDF - STMicroelectronics

DESCRIPTION
The L6560/A is a monolithic integrated circuit in Minidip and SO8 packages, designed as a controller and driver of a discrete power MOS transistor for the implementation of active power factor correction, for sinusoidal line current consumption. Realized in mixed BCD technology, the chip integrates:
- An undervoltage lockout with micropower start up and hysteresis.
- An internal temperature compensated precise band gap reference.
- A stable error amplifier.
- One quadrant multiplier.
- Current sense comparator.
- An output overvoltage protection circuit.
- A totem-pole output stage able to drive a POWER MOS or IGBT devices with source and sink current of 400mA. The chip works in transition mode and is particularly intended for lamp ballast applications and for low power SMPS.

VERY PRECISE ADJUSTABLE INTERNAL OUTPUT OVERVOLTAGE PROTECTION
HYSTERETIC START-UP (ISTART-UP < 0.5mA)
VERY LOW QUIESCENT CURRENT (< 3.5mA)
INTERNAL START-UP TIMER
TRANSITION MODE OPERATING
TOTEM POLE OUTPUT CURRENT: ±400mA
DIP8/SO8 PACKAGES