LH28F016SC-L Datasheet PDF - Sharp Electronics

DESCRIPTION
The LH28F016SC-L/SCH-L flash memories with SmartVoltage technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. Their symmetrically-blocked architecture, flexible voltage and enhanced cycling capability provide for highly flexible component suitable for resident flash arrays, SIMMs and memory cards. Their enhanced suspend capabilities provide for an ideal solution for code + data storage applications.

FEATURES
• SmartVoltage technology
    – 2.7 V (Read-only), 3.3 V or 5 V VCC
    – 3.3 V, 5 V or 12 V VPP
• High performance read access time
    LH28F016SC-L95/SCH-L95
        – 95 ns (5.0±0.25 V)/100 ns (5.0±0.5 V)/120 ns (3.3±0.3 V)/150 ns (2.7 to 3.6 V)
    LH28F016SC-L12/SCH-L12
        – 120 ns (5.0±0.5 V)/150 ns (3.3±0.3 V)/170 ns (2.7 to 3.6 V)
• Enhanced automated suspend options
    – Byte write suspend to read
    – Block erase suspend to byte write
    – Block erase suspend to read
• Enhanced data protection features
    – Absolute protection with VPP = GND
    – Flexible block locking
    – Block erase/byte write lockout during power transitions
• SRAM-compatible write interface
• High-density symmetrically-blocked architecture
    – Thirty-two 64 k-byte erasable blocks
• Enhanced cycling capability
    – 100 000 block erase cycles
    – 3.2 million block erase cycles/chip
• Low power management
    – Deep power-down mode
    – Automatic power saving mode decreases ICC in static mode
• Automated byte write and block erase
    – Command user interface
    – Status register
• ETOXTM∗ V nonvolatile flash technology
• Packages
    – 40-pin TSOP Type I (TSOP040-P-1020) Normal bend/Reverse bend
    – 44-pin SOP (SOP044-P-0600) [LH28F016SC-L]
    – 48-ball CSP (FBGA048-P-0810)