LH28F016SUT-70 Datasheet PDF - Sharp Electronics

INTRODUCTION
Sharp’s LH28F016SU 16M Flash Memory is a revolutionary architecture which enables the design of truly mobile, high performance, personal computing and communication products. With innovative capabilities, 5 V single voltage operation and very high read/write performance, the LH28F016SU is also the ideal choice for designing embedded mass storage memory systems.

DESCRIPTION
The LH28F016SU is a high performance 16M (16,777,216 bit) block erasable non-volatile random access memory organized as either 1M × 16 or 2M × 8. The LH28F016SU includes thirty-two 64K (65,536) blocks or thirty-two 32-KW (32,768) blocks. A chip memory map is shown in Figure 4.
The implementation of a new architecture, with many enhanced features, will improve the device operating characteristics and results in greater product reliability and ease of use.

FEATURES
• User-Configurable x8 or x16 Operation
• User-Selectable 3.3 V or 5 V VCC
• 70 ns Maximum Access Time
• 0.32 MB/sec Write Transfer Rate
• 100,000 Erase Cycles per Block
• 32 Independently Lockable Blocks
• 5 V Write/Erase Operation (5 V VPP)
   – No Requirement for DC/DC Converter to Write/Erase
• Minimum 2.7 V Read capability
   – 160 ns Maximum Access Time (VCC = 2.7 V)
• Revolutionary Architecture
   – Pipelined Command Execution
   – Write During Erase
   – Command Superset of Sharp LH28F008SA
• 5 µA (Typ.) ICC in CMOS Standby
• 1 µA (Typ.) Deep Power-Down
• State-of-the-Art 0.55 µm ETOX™ Flash Technology
• 56-Pin, 1.2 mm × 14 mm × 20 mm TSOP (Type I) Package