LH28F400SUB-Z0 Datasheet PDF - Sharp Electronics

INTRODUCTION
Sharp’s LH28F400SU 4M Flash Memory is a revolutionary architecture which enables the design of truly mobile, high performance, personal computing and communication products. With innovative capabilities, 3.3 V low power operation and very high read/write performance, the LH28F400SU is also the ideal choice for designing embedded mass storage flash memory systems.

FEATURES
• User-Configurable x8 or x16 Operation
• 5 V Write/Erase Operation (5 V VPP, 3.3 V VCC)
    – No Requirement for DC/DC Converter to Write/Erase
• 150 ns Maximum Access Time (VCC = 3.3 V ± 0.3 V)
• Min. 2.7 V Read Capability
    – 160 ns Maximum Access Time (VCC = 2.7 V)
• 32 Independently Lockable Blocks (16K)
• 100,000 Erase Cycles per Block
• Automated Byte Write/Block Erase
    – Command User Interface
    – Status Register
    – RY»/BY» Status Output
• System Performance Enhancement
    – Erase Suspend for Read
    – Two-Byte Write
    – Full Chip Erase
• Data Protection
    – Hardware Erase/Write Lockout during Power Transition
    – Software Erase/Write Lockout
• Independently Lockable for Write/Erase on Each Block (Lock Block and Protect Set/Reset)
• 4 µA (Typ.) ICC in CMOS Standby
• 0.2 µA (Typ.) Deep Power-Down
• State-of-the-Art 0.45 µm ETOX™ Flash Technology
• Extended Temperature Operation
    – -20°C to +85°C
• 49-Pin, .67 mm × 8 mm × 8 mm CSP Package