LH28F800BJB-PTTL10 Datasheet PDF - Sharp Electronics

Product Overview
The product is a high-performance 8M-bit Boot Block Flash memory organized as 512K-word of 16 bits or 1Mbyte of 8 bits. The 512K-word/1M-byte of data is arranged in two 4K-word/8K-byte boot blocks, six 4K-word/8Kbyte parameter blocks and fifteen 32K-word/64K-byte main blocks which are individually erasable, lockable and unlockable in-system. The memory map is shown in Figure 3.

8M-BIT ( 512Kbit ×16 / 1Mbit ×8 ) Boot Block Flash MEMORY

■ Low Voltage Operation
   - VCC=VCCW=2.7V-3.6V Single Voltage
■ OTP(One Time Program) Block
   - 3963 word + 4 word Program only array
■ User-Configurable ×8 or ×16 Operation
■ High-Performance Read Access Time
   - 100ns(VCC=2.7V-3.6V)
■ Operating Temperature
   - 0°C to +70°C
■ Low Power Management
   - Typ. 2µA (VCC=3.0V) Standby Current
   - Automatic Power Savings Mode Decreases ICCR in Static Mode
   - Typ. 120µA (VCC=3.0V, TA=+25°C, f=32kHz) Read Current
■ Optimized Array Blocking Architecture
   - Two 4K-word (8K-byte) Boot Blocks
   - Six 4K-word (8K-byte) Parameter Blocks
   - Fifteen 32K-word (64K-byte) Main Blocks
   - Top Boot Location
■ Extended Cycling Capability
   - Minimum 100,000 Block Erase Cycles
■ Enhanced Automated Suspend Options
   - Word/Byte Write Suspend to Read
   - Block Erase Suspend to Word/Byte Write
   - Block Erase Suspend to Read
■ Enhanced Data Protection Features
   - Absolute Protection with VCCW≤VCCWLK
   - Block Erase, Full Chip Erase, Word/Byte Write and Lock-Bit Configuration Lockout during Power Transitions
   - Block Locking with Command and WP#
   - Permanent Locking
■ Automated Block Erase, Full Chip Erase,
   - Word/Byte Write and Lock-Bit Configuration
   - Command User Interface (CUI)
   - Status Register (SR)
■ SRAM-Compatible Write Interface
■ Chip-Size Packaging
   - 48-Ball CSP
■ ETOXTM* Nonvolatile Flash Technology
■ CMOS Process (P-type silicon substrate)
■ Not designed or rated as radiation hardened