LH28F800SUT-70 Datasheet PDF - Sharp Electronics

INTRODUCTION
Sharp’s LH28F800SU 8M Flash Memory is a revolutionary architecture which enables the design of truly mobile, high performance, personal computing and communication products. With innovative capabilities, 5 V single voltage operation and very high read/write performance, the LH28F800SU is also the ideal choice for designing embedded mass storage flash memory systems.

FEATURES
• User-Configurable x8 or x16 Operation
• User-Selectable 3.3 V or 5 V VCC
• 5 V Write/Erase Operations (5 V VPP)
    – No Requirement for DC/DC Converter to Write/Erase
• 70 ns Maximum Access Time
• Minimum 2.7 V Read capability
    – 160 ns Maximum Access Time (VCC = 2.7 V)
• 16 Independently Lockable Blocks
• 0.32 MB/sec Write Transfer Rate
• 100,000 Erase Cycles per Block
• Revolutionary Architecture
    – Pipelined Command Execution
    – Write During Erase
    – Command Superset of Sharp LH28F008SA
• 5 µA (TYP.) ICC in CMOS Standby
• 1 µA (TYP.) Deep Power-Down
• State-of-the-Art 0.55 µm ETOX™ Flash Technology
• 56-Pin, 1.2 mm × 14 mm × 20 mm TSOP (Type I) Package