M14128 Datasheet PDF - STMicroelectronics

DESCRIPTION
Each device is an electrically erasable programmable memory (EEPROM) fabricated with STMicroelectronics’s High Endurance, Double Polysilicon, CMOS technology. This guarantees an endurance typically well above 100,000 Erase/Write cycles, with a data retention of 40 years. The memory operates with a power supply as low as 2.5 V.

â–  Compatible with I2C Extended Addressing
â–  Two Wire I2C Serial Interface Supports 400 kHz Protocol
â–  Single Supply Voltage (2.5 V to 5.5 V)
â–  Hardware Write Control
â–  BYTE and PAGE WRITE (up to 64 Bytes)
â–  BYTE, RANDOM and SEQUENTIAL READ Modes
â–  Self-Timed Programming Cycle
â–  Automatic Address Incrementing
â–  Enhanced ESD/Latch-Up Behaviour
â–  100,000 Erase/Write Cycles (minimum)
â–  40 Year Data Retention (minimum)
â–  5 ms Programming Time (typical)