M24164-BN3 Datasheet PDF - STMicroelectronics

DESCRIPTION
The M24164 is a 16 Kbit EEPROM. The memory is an electrically erasable programmable memory (EEPROM) fabricated with STMicroelectronics’s High Endurance Single Polysilicon CMOS technol ogy which guarantees an endurance typically well above one million erase/write cycles with a data retention of 40 years. The "-W" version operate with a power supply value as low as 2.5V and the "-R" version operate down to 1.8V.
Both Plastic Dual-in-Line and Plastic Small Outline packages are available.

■ TWO WIRE I2C SERIAL INTERFACE SUPPORTS 400kHz PROTOCOL
■ 1 MILLION ERASE/WRITE CYCLES
■ 40 YEARS DATA RETENTION
■ 2ms TYPICAL PROGRAMMING TIME
■ SINGLE SUPPLY VOLTAGE:
   – 4.5V to 5.5V for M24164
   – 2.5V to 5.5V for M24164-W
   – 1.8V to 5.5V for M24164-R
■ HARDWARE WRITE CONTROL
■ BYTE and PAGE WRITE (up to 16 BYTES)
■ BYTE, RANDOM and SEQUENTIAL READ MODES
■ SELF TIMED PROGRAMMING CYCLE
■ AUTOMATIC ADDRESS INCREMENTING
■ ENHANCED ESD/LATCH-UP PERFORMANCES