M28256-12KA1(1999) Datasheet PDF - STMicroelectronics

DESCRIPTION
The M28256 and M28256-W are 32K x8 low power Parallel EEPROM fabricated with STMicroelectronics proprietary double polysilicon CMOS technology.

■ FAST ACCESS TIME:
   – 90ns at 5V
   – 120ns at 3V
■ SINGLE SUPPLY VOLTAGE:
   – 5V ± 10% for M28256
   – 2.7V to 3.6V for M28256-xxW
■ LOW POWER CONSUMPTION
■ FAST WRITE CYCLE:
   – 64 Bytes Page Write Operation
   – Byte or Page Write Cycle
■ ENHANCED END of WRITE DETECTION:
   – Data Polling
   – Toggle Bit
■ STATUS REGISTER
■ HIGH RELIABILITY DOUBLE POLYSILICON, CMOS TECHNOLOGY:
   – Endurance >100,000 Erase/Write Cycles
   – Data Retention >10 Years
■ JEDEC APPROVEDBYTEWIDE PIN OUT
■ ADDRESS and DATA LATCHED ON-CHIP
■ SOFTWARE DATA PROTECTION