M28R400CB Datasheet PDF - STMicroelectronics

SUMMARY DESCRIPTION
The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I/O pin down to 1.65V. An optional 12V VPP power supply is provided to speed up customer programming.

FEATURES SUMMARY
■ SUPPLY VOLTAGE
    – VDD = 1.65V to 2.2V Core Power Supply
    – VDDQ= 1.65V to 2.2V for Input/Output
    – VPP = 12V for fast Program (optional)
■ ACCESS TIMES: 90ns, 120ns
■ PROGRAMMING TIME
    – 10µs typical
    – Double Word Programming Option
■ COMMON FLASH INTERFACE
    – 64 bit Security Code
■ MEMORY BLOCKS
    – Parameter Blocks (Top or Bottom location)
    – Main Blocks
■ BLOCK LOCKING
    – All blocks locked at Power Up
    – Any combination of blocks can be locked
    – WP for Block Lock-Down
■ SECURITY
    – 64 bit user Programmable OTP cells
    – 64 bit unique device identifier
    – One Parameter Block Permanently Lockable
■ AUTOMATIC STAND-BY MODE
■ PROGRAM and ERASE SUSPEND
■ 100,000 PROGRAM/ERASE CYCLES per BLOCK
■ ELECTRONIC SIGNATURE
    – Manufacturer Code: 20h
    – Top Device Code, M28R400CT: 882Ah
    – Bottom Device Code, M28R400CB: 882Bh