M28W640EC-ZB Datasheet PDF - STMicroelectronics

SUMMARY DESCRIPTION
The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An optional 12V VPP power supply is provided to speed up customer programming.

FEATURES SUMMARY
■ SUPPLY VOLTAGE
   – VDD = 2.7V to 3.6V Core Power Supply
   – VDDQ= 1.65V to 3.6V for Input/Output
   – VPP = 12V for fast Program (optional)
■ ACCESS TIME: 70, 85, 90,100ns
■ PROGRAMMING TIME:
   – 10µs typical
   – Double Word Programming Option
   – Quadruple Word Programming Option
■ COMMON FLASH INTERFACE
■ MEMORY BLOCKS
   – Parameter Blocks (Top or Bottom location)
   – Main Blocks
■ BLOCK LOCKING
   – All blocks locked at Power Up
   – Any combination of blocks can be locked
   – WP for Block Lock-Down
■ SECURITY
   – 128 bit user Programmable OTP cells
   – 64 bit unique device identifier
■ AUTOMATIC STAND-BY MODE
■ PROGRAM and ERASE SUSPEND
■ 100,000 PROGRAM/ERASE CYCLES per BLOCK
■ ELECTRONIC SIGNATURE
   – Manufacturer Code: 20h
   – Top Device Code, M28W640ECT: 8848h
   – Bottom Device Code, M28W640ECB: 8849h