M28W800BB100N6T Datasheet PDF - STMicroelectronics

SUMMARY DESCRIPTION
The M28W800B is a 8 Mbit (512Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/O pin down to 1.65V. An optional 12V VPP power supply is provided to speed up customer programming.

FEATURES SUMMARY
■ SUPPLY VOLTAGE
   – VDD = 2.7V to 3.6V Core Power Supply
   – VDDQ= 1.65V to 3.6V for Input/Output
   – VPP = 12V for fast Program (optional)
■ ACCESS TIME: 70, 85, 90,100ns
■ PROGRAMMING TIME
   – 10µs typical
   – Double Word Programming Option
■ COMMON FLASH INTERFACE
   – 64 bit Security Code
■ MEMORY BLOCKS
   – Parameter Blocks (Top or Bottom location)
   – Main Blocks
■ BLOCK PROTECTION on TWO PARAMETER BLOCKS
   – WP for Block Protection
■ AUTOMATIC STAND-BY MODE
■ PROGRAM and ERASE SUSPEND
■ 100,000 PROGRAM/ERASE CYCLES per BLOCK
■ ELECTRONIC SIGNATURE
   – Manufacturer Code: 20h
   – Top Device Code, M28W800BT: 8892h
   – Bottom Device Code, M28W800BB: 8893h