M29DCL1-8T Datasheet PDF - STMicroelectronics

DESCRIPTION
The M29W800A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word-by-Word basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The device can also be programmed in standard programmers.

FEATURES SUMMARY
■ 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS
■ ACCESS TIME: 80ns
■ PROGRAMMING TIME: 10µs typical
■ PROGRAM/ERASE CONTROLLER (P/E.C.)
    – Program Byte-by-Byte or Word-by-Word
    – Status Register bits and Ready/Busy Output
■ SECURITY PROTECTION MEMORY AREA
■ INSTRUCTION ADDRESS CODING: 3 digits
■ MEMORY BLOCKS
    – Boot Block (Top or Bottom location)
    – Parameter and Main blocks
■ BLOCK, MULTI-BLOCK and CHIP ERASE
■ MULTI BLOCK PROTECTION/TEMPORARY UNPROTECTION MODES
■ ERASE SUSPEND and RESUME MODES
    – Read and Program another Block during Erase Suspend
■ LOW POWER CONSUMPTION
    – Stand-by and Automatic Stand-by
■ 100,000 PROGRAM/ERASE CYCLES per BLOCK
■ 20 YEARS DATA RETENTION
    – Defectivity below 1ppm/year
■ ELECTRONIC SIGNATURE
    – Manufacturer Code: 20h
    – Top Device Code, M29W800AT: D7h
    – Bottom Device Code, M29W800AB: 5Bh