M29DW324DB Datasheet PDF - STMicroelectronics

SUMMARY DESCRIPTION
The M29DW324D is a 32 Mbit (4Mb x8 or 2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM.

FEATURES SUMMARY
■ SUPPLY VOLTAGE
    – VCC = 2.7V to 3.6V for Program, Erase and Read
    – VPP =12V for Fast Program (optional)
■ ACCESS TIME: 70, 90ns
■ PROGRAMMING TIME
    – 10µs per Byte/Word typical
    – Double Word/ Quadruple Byte Program
■ MEMORY BLOCKS
    – Dual Bank Memory Array: 16Mbit+16Mbit
    – Parameter Blocks (Top or Bottom Location)
■ DUAL OPERATIONS
    – Read in one bank while Program or Erase in other
■ ERASE SUSPEND and RESUME MODES
    – Read and Program another Block during Erase Suspend
■ UNLOCK BYPASS PROGRAM COMMAND
    – Faster Production/Batch Programming
■ VPP/WP PIN for FAST PROGRAM and WRITE PROTECT
■ TEMPORARY BLOCK UNPROTECTION MODE
■ COMMON FLASH INTERFACE
    – 64 bit Security Code
■ EXTENDED MEMORY BLOCK
    – Extra block used as security block or to store additional information
■ LOW POWER CONSUMPTION
    – Standby and Automatic Standby
■ 100,000 PROGRAM/ERASE CYCLES per BLOCK
■ ELECTRONIC SIGNATURE
    – Manufacturer Code: 0020h
    – Top Device Code M29DW324DT: 225Ch
    – Bottom Device Code M29DW324DB: 225Dh