M29F100-B120XM6R Datasheet PDF - STMicroelectronics

DESCRIPTION
The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The device can also be programmed in standard programmers.

■ 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS
■ FAST ACCESS TIME: 70ns
■ FAST PROGRAMMING TIME
    – 10µs by Byte / 16µs by Word typical
■ PROGRAM/ERASE CONTROLLER (P/E.C.)
    – Program Byte-by-Byte or Word-by-Word
    – Status Register bits and Ready/Busy Output
■ MEMORY BLOCKS
    – Boot Block (Top or Bottom location)
    – Parameter and Main blocks
■ BLOCK, MULTI-BLOCK and CHIP ERASE
■ MULTI-BLOCK PROTECTION/TEMPORARY UNPROTECTION MODES
■ ERASE SUSPEND and RESUME MODES
    – Read and Program another Block during Erase Suspend
■ LOW POWER CONSUMPTION
    – Stand-byand Automatic Stand-by
■ 100,000 PROGRAM/ERASE CYCLES per BLOCK
■ 20 YEARS DATARETENTION
    – Defectivity below 1ppm/year
■ ELECTRONIC SIGNATURE
    – ManufacturerCode: 0020h
    – Device Code, M29F100T: 00D0h
    – Device Code, M29F100B: 00D1h