M29F800AB Datasheet PDF - STMicroelectronics

SUMMARY DESCRIPTION
The M29F800A is an 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM.
   
■ SINGLE 5V±10% SUPPLY VOLTAGE for
    PROGRAM, ERASE and READ OPERATIONS
■ ACCESS TIME: 70ns
■ PROGRAMMING TIME
    – 8µs per Byte/Word typical
■ 19 MEMORY BLOCKS
    – 1 Boot Block (Top or Bottom Location)
    – 2 Parameter and 16 Main Blocks
■ PROGRAM/ERASE CONTROLLER
    – Embedded Byte/Word Program algorithm
    – Embedded Multi-Block/Chip Erase algorithm
    – Status Register Polling and Toggle Bits
    – Ready/Busy Output Pin
■ ERASE SUSPEND and RESUME MODES
    – Read and Program another Block during
        Erase Suspend
■ TEMPORARY BLOCK UNPROTECTION
    MODE
■ LOW POWER CONSUMPTION
    – Standby and Automatic Standby
■ 100,000 PROGRAM/ERASE CYCLES per
    BLOCK
■ 20 YEARS DATA RETENTION
    – Defectivity below 1 ppm/year
■ ELECTRONIC SIGNATURE
    – Manufacturer Code: 0020h
    – Top Device Code M29F800AT: 00ECh
    – Bottom Device Code M29F800AB: 0058h