M29W800T Datasheet PDF - STMicroelectronics

DESCRIPTION
The M29W800 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basisusing only a single2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The device can also be programmed in standard programmers.

■ M29W800T and M29W800B are replaced respectively by the M29W800AT and M29W800AB
■ 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS
■ FASTACCESS TIME: 90ns
■ FAST PROGRAMMING TIME
   – 10µs by Byte / 20µs by Word typical
■ PROGRAM/ERASE CONTROLLER (P/E.C.)
   – Program Byte-by-Byte or Word-by-Word
   – Status Register bits and Ready/Busy Output
■ MEMORY BLOCKS
   – Boot Block (Top or Bottom location)
   – Parameter and Main blocks
■ BLOCK, MULTI-BLOCK and CHIP ERASE
■ MULTI BLOCK PROTECTION/TEMPORARY UNPROTECTION MODES
■ ERASE SUSPEND and RESUME MODES
   – Read and Program another Block during Erase Suspend
■ LOW POWER CONSUMPTION
   – Stand-byand AutomaticStand-by
■ 100,000 PROGRAM/ERASE CYCLES per BLOCK
■ 20 YEARS DATARETENTION
   – Defectivity below 1ppm/year ELECTRONIC SIGNATURE
   – ManufacturerCode: 0020h
   – Device Code, M29W800T: 00D7h
   – Device Code, M29W800B: 005Bh