M36W416BG Datasheet PDF - STMicroelectronics

SUMMARY DESCRIPTION
The M36W416TG is a low voltage Multiple Memory Product which combines two memory devices; a 16 Mbit boot block Flash memory and a 4 Mbit SRAM. Recommended operating conditions do not allow both the Flash memory and the SRAM memory to be active at the same time.

FEATURES SUMMARY
■ MULTIPLE MEMORY PRODUCT
    – 16 Mbit (1Mb x 16) Boot Block Flash Memory
    – 4 Mbit (256Kb x 16) SRAM
■ SUPPLY VOLTAGE
    – VDDF = VDDS = 2.7V to 3.3V
    – VDDQF = VDDS = 2.7V to 3.3V
    – VPPF = 12V for Fast Program (optional)
■ ACCESS TIME: 70ns, 85ns
■ LOW POWER CONSUMPTION
■ ELECTRONIC SIGNATURE
    – Manufacturer Code: 20h
    – Top Device Code, M36W416TG: 88CEh
    – Bottom Device Code, M36W416BG: 88CFh

FLASH MEMORY
■ MEMORY BLOCKS
    – Parameter Blocks (Top or Bottom location)
    – Main Blocks
■ PROGRAMMING TIME
    – 10µs typical
    – Double Word Programming Option
■ BLOCK LOCKING
    – All blocks locked at Power up
    – Any combination of blocks can be locked
    – WPF for Block Lock-Down
■ AUTOMATIC STAND-BY MODE
■ PROGRAM and ERASE SUSPEND
■ 100,000 PROGRAM/ERASE CYCLES per BLOCK
■ COMMON FLASH INTERFACE
    – 64 bit Security Code
■ SECURITY
    – 64 bit user programmable OTP cells
    – 64 bit unique device identifier
    – One parameter block permanently lockable

SRAM
■ 4 Mbit (256Kb x 16)
■ ACCESS TIME: 70ns
■ LOW VDDS DATA RETENTION: 1.5V
■ POWER DOWN FEATURES USING TWO CHIP ENABLE INPUTS