M464S1724DTS-L1L Datasheet PDF - Samsung

GENERAL DESCRIPTION
The Samsung M464S1724DTS is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M464S1724DTS consists of eight CMOS 8M x 16 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 144-pin glass-epoxy substrate. Three 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The M464S1724DTS is a Small Outline Dual In-line Memory Module and is intended for mounting into 144-pin edge connector sock ets.

• Burst mode operation
• Auto & self refresh capability (4096 Cycles/64ms)
• LVTTL compatible inputs and outputs
•  Single 3.3V ± 0.3V power supply
• MRS cycle with address key programs
   Latency (Access from column address)
   Burst length (1, 2, 4, 8 & Full page)
    Data scramble (Sequential & Interleave)
•  All inputs are sampled at the positive going edge of the system clock
•  Serial presence detect with EEPROM
•  PCB : Height (1,250mil)  , double sided component