M464S3254DTS-L1L Datasheet PDF - Samsung

GENERAL DESCRIPTION
The Samsung M464S3254DTS is a 32M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M464S3254DTS consists of eight CMOS 16M x 16 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 144-pin glass-epoxy substrate. Three 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The M464S3254DTS is a Small Outline Dual In-line Memory Module and is intended for mounting into 144-pin edge connector sock ets.

FEATURE
•Burst mode operation
•Auto & self refresh capability (8192 Cycles/64ms)
•LVTTL compatible inputs and outputs
• Single 3.3V ± 0.3V power supply
•MRS cycle with address key programs
  Latency (Access from column address)
  Burst length (1, 2, 4, 8 & Full page)
  Data scramble (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock
• Serial presence detect with EEPROM
• PCB : Height (1,250mil), double sided component