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M93C76MN Datasheet PDF - STMicroelectronics

M93C46-BN7 image

Part Name
M93C76MN

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31 Pages

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232 kB

MFG CO.
ST-Microelectronics
STMicroelectronics ST-Microelectronics

These electrically erasable programmable memory (EEPROM) devices are accessed through a Serial Data Input (D) and Serial Data Output (Q) using the MICROWIRE bus protocol.


FEATURES SUMMARY
â–  Industry Standard MICROWIRE Bus
â–  Single Supply Voltage:
– 4.5 to 5.5V for M93Cx6
– 2.5 to 5.5V for M93Cx6-W
– 1.8 to 5.5V for M93Cx6-R
â–  Dual Organization: by Word (x16) or Byte (x8)
â–  Programming Instructions that work on: Byte, Word or Entire Memory
â–  Self-timed Programming Cycle with Auto Erase
â–  Speed:
– 1MHz Clock Rate, 10ms Write Time (Current product, identified by process identification letter F or M)
– 2MHz Clock Rate, 5ms Write Time (New Product, identified by process identification letter W or G or S)
â–  Sequential Read Operation
â–  Enhanced ESD/Latch-Up Behaviour
â–  More than 1 Million Erase/Write Cycles
â–  More than 40 Year Data Retention

 


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