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M93S66DS Datasheet PDF - STMicroelectronics

M93S46-BN3 image

Part Name
M93S66DS

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page
34 Pages

File Size
188.2 kB

MFG CO.
ST-Microelectronics
STMicroelectronics ST-Microelectronics

SUMMARY DESCRIPTION
This specification covers a range of 4K, 2K, 1K bit serial Electrically Erasable Programmable Memory (EEPROM) products (respectively for M93S66, M93S56, M93S46). In this text, these products are collectively referred to as M93Sx6.
   
FEATURES SUMMARY
■ Industry Standard MICROWIRE Bus
■ Single Supply Voltage:
    – 4.5 to 5.5V for M93Sx6
    – 2.5 to 5.5V for M93Sx6-W
    – 1.8 to 5.5V for M93Sx6-R
■ Single Organization: by Word (x16)
■ Programming Instructions that work on: Word
    or Entire Memory
■ Self-timed Programming Cycle with AutoErase
■ User Defined Write Protected Area
■ Page Write Mode (4 words)
■ Ready/Busy Signal During Programming
■ Speed:
    – 1MHz Clock Rate, 10ms Write Time
        (Current product, identified by process
        identification letter F or M)
    – 2MHz Clock Rate, 5ms Write Time (New
        Product, identified by process
        identification letter W or G)
■ Sequential Read Operation
■ Enhanced ESD/Latch-Up Behavior
■ More than 1 Million Erase/Write Cycles
■ More than 40 Year Data Retention
   


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