MA4PBL027(V2) Datasheet PDF - M/A-COM Technology Solutions, Inc.

Description
This device is a Silicon-Glass Beam-Lead PIN diode fabricated with M/A-COM’s patented HMICTM process. This device features one silicon pedestal embedded in a low loss, low dispersion glass which supports the beam-leads. The diode is formed on the top of the pedestal, and airbridges connect the diode to the beam-leads. The topside is fully encapsulated with silicon nitride and has an additional polymer layer for scratch and impact protection. These protective coatings prevent damage to the junction and the air-bridges during handling and assembly.
The diodes themselves exhibit low series resistance, low capacitance, and extremely fast switching speed

FEATUREs
• Beam-Lead Device
• No Wirebonds Required
• Rugged Silicon-Glass Construction
• Silicon Nitride Passivation
• Polymer Scratch and Impact Protection
• Low Parasitic Capacitance and Inductance
• Ultra Low Capacitance < 40 fF
• Excellent RC Product < 0.10 pS
• High Switching Cutoff Frequency > 110 GHz
• 110 Nanosecond Minority Carrier Lifetime
• Driven by Standard +5V TTL PIN Diode Driver