MML20211HT1 Datasheet PDF - Freescale Semiconductor

Enhancement Mode pHEMT Technology (E--pHEMT)
Low Noise Amplifier

The MML20211H is a single--stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed for a range of low noise, high linearity applications such as pico cell, femto cell, tower mounted amplifiers (TMA) and receiver front end circuits. It operates from a single voltage supply and is suitable for applications with frequencies from 1400 to 2800 MHz such as TD--SCDMA, W--CDMA, UMTS, PCS, LTE and BWA.

FEATUREs
• Ultra Low Noise Figure: 0.65 dB @ 2140 MHz
• Frequency: 1400--2800 MHz
• High Reverse Isolation: --35 dB @ 2140 MHz
• P1dB: 21.3 dBm @ 2140 MHz
• Small--Signal Gain: 18.6 dB @ 2140 MHz (adjustable externally)
• Third Order Output Intercept Point: 33 dBm @ 2140 MHz
• Active Bias Control (adjustable externally)
• Single 5 V Supply
• Supply Current: 60 mA
• 50 Ohm Operation (some external matching required)
• Cost--effective 8--pin, 2 mm DFN Surface Mount Plastic Package
• In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel.