NPN SILICON ANNULAR AMPLIFIER TRANSISTORS

. . . designed for general-purpose, high-voltage amplifier anddriver applications.

• High Collector-Emitter Breakdown Voltage-
   BVCEO = 60 Vdc(Min) @ Ic = 1.0 mAdc - MPS-U05
                    80 Vdc(Min) @ lc = 1.0 mAdc - MPS-U06
• High Power Dissipation - PQ = 10 W @ TC = 25°C
• Complements to PNP MPS-U55 and MPS-U56