NPN SILICON ANNULAR AMPLIFIER TRANSISTOR

. . . designed for general-purpose, high-voltage amplifier and driver applications.

• High Collector-Emitter Breakdown Voltage —
   BVCEO = 100 Adc (Min) @ IC = 1.0 mAdc
• High Power Dissipation - PD = 10W @ TC = 25°C
• Complement to PNP MPS-U57