MT16VDDF12864HG-335 Datasheet PDF - Micron Technology

General Description
The MT16VDDF6464H and MT16VDDF12864H are high-speed CMOS, dynamic random-access, 512MB and 1GB memory modules organized in a x64 configuration. These modules use internally configured quadbank DRAM devices.

FEATUREs
• 200-pin, small-outline, dual in-line memory module (SODIMM)
• Fast data transfer rates: PC1600, PC2100, and PC2700
• Utilizes 200 MT/s, 266 MT/s, or 333 MT/s DDR SDRAM components
• 512MB (64 Meg x 64), 1GB (128 Meg x 64)
• VDD = VDDQ = +2.5V
• VDDSPD = +2.3V to +3.6V
• 2.5V I/O (SSTL_2 compatible)
• Commands entered on each positive CK edge
• DQS edge-aligned with data for READs; centeraligned with data for WRITEs
• Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle
• Bidirectional data strobe (DQS) transmitted/ received with data—i.e., source-synchronous data capture
• Differential clock inputs CK and CK#
• Four internal device banks for concurrent operation
• Programmable burst lengths: 2, 4, or 8
• Auto precharge option
• Auto Refresh and Self Refresh Modes
• 7.8125µs maximum average periodic refresh interval
• Serial Presence Detect (SPD) with EEPROM
• Programmable READ CAS latency
• Gold edge contacts