MT16VDDF6464H(2008) Datasheet PDF - Micron Technology

General Description
The MT16VDDF6464H and MT16VDDF12864H are high-speed, CMOS, dynamic random access 512MB and 1GB memory modules organized in a x64 configuration. These modules use DDR SDRAM devices with four internal banks.

FEATUREs
• 200-pin, small-outline dual in-line memory module (SODIMM)
• Fast data transfer rates: PC2100, PC2700, and PC3200
• 512MB (64 Meg x 64) and 1GB (128 Meg x 64)
• VDD = VDDQ = +2.5V (-40B: VDD = VDDQ = +2.6V)
• VDDSPD = +2.3V to +3.6V
• 2.5V I/O (SSTL_2-compatible)
• Internal, pipelined double data rate (DDR) 2n-prefetch architecture; two data accesses per clock cycle
• Bidirectional data strobe (DQS) transmitted/received with data—that is, source-synchronous data capture
• Differential clock inputs CK and CK#
• Multiple internal device banks for concurrent operation
• Dual rank
• Programmable burst lengths (BL): 2, 4, or 8
• Auto precharge option
• Auto refresh and self refresh modes: 7.8125µs maximum average periodic refresh interval
• Serial presence-detect (SPD) with EEPROM
• Selectable CAS latency (CL) for maximum compatibility
• Gold edge contacts