MT28F002B3VG-10TET Datasheet PDF - Micron Technology

GENERAL DESCRIPTION
The MT28F002B3 (x8) and MT28F200B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable, read-only memories containing 2,097,152 bits organized as 131,072 words (16 bits) or 262,144 bytes (8 bits). Writing or erasing the device is done with either a 3.3V or 5V VPP voltage, while all operations are performed with a 3.3V VCC. Due to process technology advances, 5V VPP is optimal for application and production programming. For backward compatibility with SmartVoltage technology, 12V VPP is supported for a maximum of 100 cycles and may be connected for up to 100 cumulative hours. These devices are fabricated with Micron’s advanced CMOS floating-gate process.

FEATURES
• Five erase blocks:
   16KB/8K-word boot block (protected)
   Two 8KB/4K-word parameter blocks
   Two main memory blocks
• Smart 3 technology (B3):
   3.3V ±0.3V VCC
   3.3V ±0.3V VPP application programming
   5V ±10% VPP application/production programming
   12V ±5% VPP compatibility production programming
• Address access times: 90ns, 100ns
• 100,000 ERASE cycles
• Industry-standard pinouts
• Inputs and outputs are fully TTL-compatible
• Automated write and erase algorithm
• Two-cycle WRITE/ERASE sequence
• Byte- or word-wide READ and WRITE (MT28F200B3, 128K x 16/256K x 8)
• Byte-wide READ and WRITE only (MT28F002B3, 256K x 8)
• TSOP and SOP packaging options