MT48LC64M4A2FG-7EIT(2005) Datasheet PDF - Micron Technology

General Description
The 256Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. It is internally configured as a quad bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 67,108,864-bit banks is organized as 8,192 rows by 2,048 columns by 4 bits. Each of the x8’s 67,108,864-bit banks is organized as 8,192 rows by 1,024 columns by 8 bits. Each of the x16’s 67,108,864-bit banks is organized as 8,192 rows by 512 columns by 16 bits.

FEATUREs
• PC66-, PC100-, and PC133-compliant
• Fully synchronous; all signals registered on
   positive edge of system clock
• Internal pipelined operation; column address can
   be changed every clock cycle
• Internal banks for hiding row access/precharge
• Programmable burst lengths: 1, 2, 4, 8, or full page
• Auto Precharge, includes CONCURRENT AUTO
   PRECHARGE, and Auto Refresh Modes
• Self Refresh Mode
• 64ms, 8,192-cycle refresh
• LVTTL-compatible inputs and outputs
• Single +3.3V ±0.3V power supply