MTH8N90 Datasheet PDF - New Jersey Semiconductor

Power Field Effect Transistor
N-Channel Enhancement-Mode
Silicon Gate TMOS

These TMOS Power FETs are designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.

• Silicon Gate for Fast Switching Speeds — Switching Times Specified at 100C
• Designers Data — IDSS, VDS(on). VGS(th) and SOA Specified at Elevated Temperature
• SOA is Power Dissipation Limited
• Source-to-Drain Diode Characterized for Use With Inductive Loads