MWS11-GB11-XX Datasheet PDF - Microsemi Corporation

DESCRIPTION
This general purpose amplifier is a low cost, broadband RFIC manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) process (MOCVD). This RFIC amplifier was designed as an easily cascadable 50 ohm gain block. The device is self-contained with 50 ohm input and output impedance. Applications include IF and RF amplification in wireless/ wired voice and data communication products and broadband test equipment operating up to 6 GHz.
This RFIC amplifier is initially available in a plastic SOT-89 3-Pin package to handle P1dB output power up to 19dBm (5V). The same RFIC will be available later in an advanced Microsemi Gigamite™ package, with significantly smaller footprint for applications where board space is at a premium.

KEY FEATURES
◾ Advanced InGaP HBT
◾ DC to 6GHz
◾ Single +5V Supply
◾ Small Signal Gain = 16dB
◾ P1dB = 19dBm (5V), f=1GHz
◾ SOT-89 3-Pin, & Gigamite Packages

APPLICATIONS/BENEFITS
◾ Broadband Gain Blocks
◾ IF or RF buffer Amplifiers
◾ Driver Stage for Power Amps
◾ Final Power Amp for Low to Medium Power Applications
◾ Broadband Test Equipment