NTD2955T4G Datasheet PDF - VER SEMICONDUCTOR CO.,LIMITED

General Description
   This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, high− speed switching applications in power supplies, converters, and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer an additional safety margin against unexpected voltage transients.

FEATUREs
• VDS (V) = -60V
• ID = -12A (VGS = -10V)
• RDS(on) = 150 mΩ (VGS = -10V)
• Avalanche Energy Specified
• IDSSand VDS(on)Specified at Elevated Temperature
• Designed for Low−Voltage, High−Speed Switching Applications and to Withstand High Energy in the Avalanche and Commutation Modes