NTHD4P02F(2005) Datasheet PDF - ON Semiconductor

Power MOSFET and Schottky Diode
−20 V, −3.0 A, Single P−Channel with
3.0 A Schottky Barrier Diode, ChipFET

FEATUREs
• Leadless SMD Package Featuring a MOSFET and Schottky Diode
• 40% Smaller than TSOP−6 Package with Similar Thermal
   Characteristics
• Independent Pinout to each Device to Ease Circuit Design
• Ultra Low VF Schottky
• Pb−Free Package is Available

APPLICATIONs
• Li−Ion Battery Charging
• High Side DC−DC Conversion Circuits
• High Side Drive for Small Brushless DC Motors
• Power Management in Portable, Battery Powered Products