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NTLJD3182FZ Datasheet PDF - ON Semiconductor

NTLJD3182FZ image

Part Name
NTLJD3182FZ

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page
9 Pages

File Size
211.7 kB

MFG CO.
ONSEMI
ON Semiconductor ONSEMI

Power MOSFET and Schottky Diode
−20 V, −4.0 A, Single P−Channel &
Schottky Barrier Diode, ESD


FEATUREs
• WDFN 2x2 mm Package with Exposed Drain Pads for Excellent
   Thermal Conduction
• Lowest RDS(on) Solution in 2x2 mm Package
• Footprint Same as SC−88 Package
• Low Profile (< 0.8 mm) for Easy Fit in Thin Environments
• ESD Protected
• High Current Schottky Diode: 2 A Current Rating
• This is a Pb−Free Device


APPLICATIONs
• Optimized for Battery and Load Management Applications in
   Portable Equipment
• Li−Ion Battery Charging and Protection Circuits
• DC−DC Buck Circuit


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