P21NM50N Datasheet PDF - STMicroelectronics

Description
The devices are realized with the second generation of MDmesh Technology. This revolutionary Power MOSFET associates a new vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters

General features
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance

APPLICATIONs
■ Switching application