P21NM50N(2005) Datasheet PDF - STMicroelectronics

DESCRIPTION
The STx21NM50N is realized with the second generation of MDmesh Technology. This revolutionary MOSFET associates a new vertical structure to the Companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters

General Features
■ 100% AVALANCHE TESTED
■ LOW INPUT CAPACITANCE AND GATE
   CHARGE
■ LOW GATE INPUT RESISTANCE

APPLICATIONS
   The MDmesh™ II family is very suitable for 
   increasing power density of high voltage converters
   allowing system miniaturization and higher efficiencies.