P21NM60N(2005) Datasheet PDF - STMicroelectronics

DESCRIPTION
The STx21NM60N is realized with the second generation of MDmesh Technology. This revolutionary MOSFET associates a new vertical structure to the Companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters

FEATUREs
â–  100% AVALANCHE TESTED
â–  LOW INPUT CAPACITANCE AND GATE
   CHARGE
â–  LOW GATE INPUT RESISTANCE

APPLICATIONS
   The MDmeshâ„¢ II family is very suitable for 
   increasing power density of high voltage converters
   allowing system miniaturization and higher efficiencies.