P4N150 Datasheet PDF - STMicroelectronics

Description
Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.
The strengthened layout coupled with the company’s proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.

■ 100% avalanche tested
■ Intrinsic capacitances and Qg minimized
■ High speed switching
■ Fully isolated TO-3PF and TO-220FH plastic packages
■ Creepage distance path is 5.4 mm (typ.) for TO-3PF
■ Creepage distance path is > 4 mm for TO-220FH

Application
■ Switching applications